RFD3055LE Pricing (USD) [105080PC Stock]
- 1 pcs$0.40556
- 10 pcs$0.33459
- 100 pcs$0.25806
- 500 pcs$0.19116
- 1,000 pcs$0.15293
- Nimewo Pati:
- RFD3055LE
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 60V 11A I-PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Diodes - RF, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor RFD3055LE electronic components. RFD3055LE can be shipped within 24 hours after order. If you have any demands for RFD3055LE, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RFD3055LE Atribi pwodwi yo
Nimewo Pati :
RFD3055LE
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 60V 11A I-PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
107 mOhm @ 8A, 5V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11.3nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
350pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
38W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I-PAK
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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