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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. APTM100H35FT3G

Microsemi Corporation - APTM100H35FT3G

KEY Part #: K6522678

APTM100H35FT3G Pricing (USD) [934PC Stock]

  • 1 pcs$50.00678
  • 100 pcs$49.75799
Nimewo Pati:
APTM100H35FT3G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET 4N-CH 1000V 22A SP3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTM100H35FT3G electronic components. APTM100H35FT3G can be shipped within 24 hours after order. If you have any demands for APTM100H35FT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM100H35FT3G Atribi pwodwi yo

Nimewo Pati : APTM100H35FT3G
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET 4N-CH 1000V 22A SP3
Seri : -
Estati Pati : Active
FET Kalite : 4 N-Channel (H-Bridge)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 1000V (1kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A
RD sou (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 186nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 5200pF @ 25V
Pouvwa - Max : 390W
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP3
Pake Aparèy Founisè : SP3

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