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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. MCP87050T-U/MF

Microchip Technology - MCP87050T-U/MF

KEY Part #: K6393021

MCP87050T-U/MF Pricing (USD) [190750PC Stock]

  • 1 pcs$0.19866
  • 3,300 pcs$0.19767
Nimewo Pati:
MCP87050T-U/MF
Manifakti:
Microchip Technology
Detaye deskripsyon:
MOSFET N-CH 25V 8PDFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Tiristors - TRIACs and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Microchip Technology MCP87050T-U/MF electronic components. MCP87050T-U/MF can be shipped within 24 hours after order. If you have any demands for MCP87050T-U/MF, Please submit a Request for Quotation here or send us an email:
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ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MCP87050T-U/MF Atribi pwodwi yo

Nimewo Pati : MCP87050T-U/MF
Manifakti : Microchip Technology
Deskripsyon : MOSFET N-CH 25V 8PDFN
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 1.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 4.5V
Vgs (Max) : +10V, -8V
Antre kapasite (Ciss) (Max) @ Vds : 1040pF @ 12.5V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-PDFN (5x6)
Pake / Ka : 8-PowerTDFN
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