IXTP2R4N120P Pricing (USD) [23090PC Stock]
- 1 pcs$2.06287
- 50 pcs$2.05260
- Nimewo Pati:
- IXTP2R4N120P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1200V 2.4A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTP2R4N120P electronic components. IXTP2R4N120P can be shipped within 24 hours after order. If you have any demands for IXTP2R4N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP2R4N120P Atribi pwodwi yo
Nimewo Pati :
IXTP2R4N120P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1200V 2.4A TO-220
Seri :
Polar™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1207pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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