IXYS - IXFP4N85XM

KEY Part #: K6397921

IXFP4N85XM Pricing (USD) [37709PC Stock]

  • 1 pcs$1.20311
  • 10 pcs$1.03020
  • 100 pcs$0.82784
  • 500 pcs$0.64387
  • 1,000 pcs$0.53350

Nimewo Pati:
IXFP4N85XM
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 850V 3.5A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in IXYS IXFP4N85XM electronic components. IXFP4N85XM can be shipped within 24 hours after order. If you have any demands for IXFP4N85XM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFP4N85XM Atribi pwodwi yo

Nimewo Pati : IXFP4N85XM
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 850V 3.5A TO220
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 850V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.5 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 247pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 35W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3 Full Pack

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