Rohm Semiconductor - SP8M4FRATB

KEY Part #: K6522027

SP8M4FRATB Pricing (USD) [91257PC Stock]

  • 1 pcs$0.42847

Nimewo Pati:
SP8M4FRATB
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
4V DRIVE NCHPCH MOSFET CORRESP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Tiristors - SCR, Transistors - FETs, MOSFETs - RF and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor SP8M4FRATB electronic components. SP8M4FRATB can be shipped within 24 hours after order. If you have any demands for SP8M4FRATB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SP8M4FRATB Atribi pwodwi yo

Nimewo Pati : SP8M4FRATB
Manifakti : Rohm Semiconductor
Deskripsyon : 4V DRIVE NCHPCH MOSFET CORRESP
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Ta), 7A (Ta)
RD sou (Max) @ Id, Vgs : 18 mOhm @ 9A, 10V, 28 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 5V, 25nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 1190pF @ 10V, 2600pF @ 10V
Pouvwa - Max : 2W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP