IXYS - IXTQ36P15P

KEY Part #: K6397768

IXTQ36P15P Pricing (USD) [16464PC Stock]

  • 1 pcs$2.88218
  • 10 pcs$2.57193
  • 100 pcs$2.10906
  • 500 pcs$1.70784
  • 1,000 pcs$1.44034

Nimewo Pati:
IXTQ36P15P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET P-CH 150V 36A TO-3P.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in IXYS IXTQ36P15P electronic components. IXTQ36P15P can be shipped within 24 hours after order. If you have any demands for IXTQ36P15P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTQ36P15P Atribi pwodwi yo

Nimewo Pati : IXTQ36P15P
Manifakti : IXYS
Deskripsyon : MOSFET P-CH 150V 36A TO-3P
Seri : PolarP™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 110 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 55nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3100pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3P
Pake / Ka : TO-3P-3, SC-65-3

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