IXFK320N17T2 Pricing (USD) [4397PC Stock]
- 1 pcs$10.83659
- 10 pcs$10.02211
- 100 pcs$8.55942
- Nimewo Pati:
- IXFK320N17T2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 170V 320A TO264.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Diodes - RF and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXFK320N17T2 electronic components. IXFK320N17T2 can be shipped within 24 hours after order. If you have any demands for IXFK320N17T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFK320N17T2 Atribi pwodwi yo
Nimewo Pati :
IXFK320N17T2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 170V 320A TO264
Seri :
GigaMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
170V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
320A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
5.2 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
640nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
45000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1670W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-264AA (IXFK)
Pake / Ka :
TO-264-3, TO-264AA
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