Renesas Electronics America - RJP65T54DPM-A0#T2

KEY Part #: K6423491

[9634PC Stock]


    Nimewo Pati:
    RJP65T54DPM-A0#T2
    Manifakti:
    Renesas Electronics America
    Detaye deskripsyon:
    IGBT TRENCH 650V 60A TO-3PFP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America RJP65T54DPM-A0#T2 electronic components. RJP65T54DPM-A0#T2 can be shipped within 24 hours after order. If you have any demands for RJP65T54DPM-A0#T2, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RJP65T54DPM-A0#T2 Atribi pwodwi yo

    Nimewo Pati : RJP65T54DPM-A0#T2
    Manifakti : Renesas Electronics America
    Deskripsyon : IGBT TRENCH 650V 60A TO-3PFP
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : Trench
    Voltage - Pèseptè ki emèt deba (Max) : 650V
    Kouran - Pèseptè (Ic) (Max) : 60A
    Kouran - Pèseptè batman (Icm) : -
    Vce (sou) (Max) @ Vge, Ic : 1.68V @ 15V, 30A
    Pouvwa - Max : 63.5W
    Oblije chanje enèji : 330µJ (on), 760µJ (off)
    Kalite Antre : Standard
    Gate chaje : 72nC
    Td (on / off) @ 25 ° C : 35ns/120ns
    Kondisyon egzamen an : 400V, 30A, 10 Ohm, 15V
    Ranvèse Tan Reverse (trr) : -
    Operating Tanperati : 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : SC-94
    Pake Aparèy Founisè : TO-3PFP