Toshiba Semiconductor and Storage - TK20P04M1,RQ(S

KEY Part #: K6420834

TK20P04M1,RQ(S Pricing (USD) [266518PC Stock]

  • 1 pcs$0.15342
  • 2,000 pcs$0.15266

Nimewo Pati:
TK20P04M1,RQ(S
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 40V 20A DPAK-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK20P04M1,RQ(S electronic components. TK20P04M1,RQ(S can be shipped within 24 hours after order. If you have any demands for TK20P04M1,RQ(S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK20P04M1,RQ(S Atribi pwodwi yo

Nimewo Pati : TK20P04M1,RQ(S
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 40V 20A DPAK-3
Seri : U-MOSVI-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 29 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 985pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 27W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63