IXFT6N100Q Pricing (USD) [10367PC Stock]
- 1 pcs$4.59424
- 30 pcs$4.57138
- Nimewo Pati:
- IXFT6N100Q
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 6A TO-268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - IGBTs - Single, Tiristors - SCR and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXFT6N100Q electronic components. IXFT6N100Q can be shipped within 24 hours after order. If you have any demands for IXFT6N100Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT6N100Q Atribi pwodwi yo
Nimewo Pati :
IXFT6N100Q
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 6A TO-268
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.9 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2200pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
180W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-268
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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