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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTMFS5832NLT1G

ON Semiconductor - NTMFS5832NLT1G

KEY Part #: K6416240

NTMFS5832NLT1G Pricing (USD) [224029PC Stock]

  • 1 pcs$0.16510
  • 1,500 pcs$0.15272
Nimewo Pati:
NTMFS5832NLT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 40V 110A SO-8FL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - JFETs and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTMFS5832NLT1G electronic components. NTMFS5832NLT1G can be shipped within 24 hours after order. If you have any demands for NTMFS5832NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS5832NLT1G Atribi pwodwi yo

Nimewo Pati : NTMFS5832NLT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 40V 110A SO-8FL
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Ta), 111A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.1W (Ta), 96W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)
Pake / Ka : 8-PowerTDFN, 5 Leads

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