[1150PC Stock]
- Nimewo Pati:
- IXFX210N17T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 170V 210A PLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - SCR, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFX210N17T electronic components. IXFX210N17T can be shipped within 24 hours after order. If you have any demands for IXFX210N17T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX210N17T Atribi pwodwi yo
Nimewo Pati :
IXFX210N17T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 170V 210A PLUS247
Seri :
GigaMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
170V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
210A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.5 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
285nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
18800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1150W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS247™-3
Pake / Ka :
TO-247-3
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