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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDP4D5N10C

ON Semiconductor - FDP4D5N10C

KEY Part #: K6394518

FDP4D5N10C Pricing (USD) [25909PC Stock]

  • 1 pcs$1.59065
Nimewo Pati:
FDP4D5N10C
Manifakti:
ON Semiconductor
Detaye deskripsyon:
FET ENGR DEV-NOT REL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo and Diodes - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDP4D5N10C electronic components. FDP4D5N10C can be shipped within 24 hours after order. If you have any demands for FDP4D5N10C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDP4D5N10C Atribi pwodwi yo

Nimewo Pati : FDP4D5N10C
Manifakti : ON Semiconductor
Deskripsyon : FET ENGR DEV-NOT REL
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 128A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 310µA
Chaje Gate (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5065pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.4W (Ta), 150W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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