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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. 2N7002ET7G

ON Semiconductor - 2N7002ET7G

KEY Part #: K6421722

2N7002ET7G Pricing (USD) [3428205PC Stock]

  • 1 pcs$0.01079
Nimewo Pati:
2N7002ET7G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
NFET SOT23 60V 115MA 7MO.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Modil pouvwa chofè and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor 2N7002ET7G electronic components. 2N7002ET7G can be shipped within 24 hours after order. If you have any demands for 2N7002ET7G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2N7002ET7G Atribi pwodwi yo

Nimewo Pati : 2N7002ET7G
Manifakti : ON Semiconductor
Deskripsyon : NFET SOT23 60V 115MA 7MO
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 260mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 2.5 Ohm @ 240mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.81nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 40pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300mW (Tj)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3 (TO-236)
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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