ON Semiconductor - FDFMA2N028Z

KEY Part #: K6411848

FDFMA2N028Z Pricing (USD) [315918PC Stock]

  • 1 pcs$0.11767
  • 3,000 pcs$0.11708

Nimewo Pati:
FDFMA2N028Z
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 3.7A MLP2X2.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDFMA2N028Z electronic components. FDFMA2N028Z can be shipped within 24 hours after order. If you have any demands for FDFMA2N028Z, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDFMA2N028Z Atribi pwodwi yo

Nimewo Pati : FDFMA2N028Z
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 20V 3.7A MLP2X2
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 68 mOhm @ 3.7A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 6nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 455pF @ 10V
Karakteristik FET : Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) : 1.4W (Tj)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-MicroFET (2x2)
Pake / Ka : 6-VDFN Exposed Pad

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