GA100JT12-227 Pricing (USD) [2737PC Stock]
- 1 pcs$99.97200
- 10 pcs$95.14718
- 25 pcs$91.92969
- Nimewo Pati:
- GA100JT12-227
- Manifakti:
- GeneSiC Semiconductor
- Detaye deskripsyon:
- TRANS SJT 1200V 160A SOT227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in GeneSiC Semiconductor GA100JT12-227 electronic components. GA100JT12-227 can be shipped within 24 hours after order. If you have any demands for GA100JT12-227, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA100JT12-227 Atribi pwodwi yo
Nimewo Pati :
GA100JT12-227
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
TRANS SJT 1200V 160A SOT227
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
-
Teknoloji :
SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
160A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
10 mOhm @ 100A
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
14400pF @ 800V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
535W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227
Pake / Ka :
SOT-227-4, miniBLOC
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