GeneSiC Semiconductor - GA100JT12-227

KEY Part #: K6402343

GA100JT12-227 Pricing (USD) [2737PC Stock]

  • 1 pcs$99.97200
  • 10 pcs$95.14718
  • 25 pcs$91.92969

Nimewo Pati:
GA100JT12-227
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
TRANS SJT 1200V 160A SOT227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GA100JT12-227 electronic components. GA100JT12-227 can be shipped within 24 hours after order. If you have any demands for GA100JT12-227, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA100JT12-227 Atribi pwodwi yo

Nimewo Pati : GA100JT12-227
Manifakti : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 1200V 160A SOT227
Seri : -
Estati Pati : Obsolete
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 160A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 10 mOhm @ 100A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 14400pF @ 800V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 535W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227
Pake / Ka : SOT-227-4, miniBLOC