Vishay Siliconix - SQD40061EL_GE3

KEY Part #: K6419701

SQD40061EL_GE3 Pricing (USD) [126516PC Stock]

  • 1 pcs$0.29235

Nimewo Pati:
SQD40061EL_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CHAN 40V.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Modil pouvwa chofè, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SQD40061EL_GE3 electronic components. SQD40061EL_GE3 can be shipped within 24 hours after order. If you have any demands for SQD40061EL_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQD40061EL_GE3 Atribi pwodwi yo

Nimewo Pati : SQD40061EL_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CHAN 40V
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 5.1 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 280nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 14500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 107W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252AA
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63