[8368PC Stock]
- Nimewo Pati:
- IRFBL3703
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 260A SUPER D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFBL3703 electronic components. IRFBL3703 can be shipped within 24 hours after order. If you have any demands for IRFBL3703, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBL3703 Atribi pwodwi yo
Nimewo Pati :
IRFBL3703
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 260A SUPER D2PAK
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
260A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
7V, 10V
RD sou (Max) @ Id, Vgs :
2.5 mOhm @ 76A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
209nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
8250pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.8W (Ta), 300W (Tc)
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SUPER D2-PAK
Pake / Ka :
Super D2-Pak
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