BSS209PWH6327XTSA1 Pricing (USD) [1297466PC Stock]
- 1 pcs$0.02851
- 3,000 pcs$0.02541
- Nimewo Pati:
- BSS209PWH6327XTSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 20V 0.63A SOT-323.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSS209PWH6327XTSA1 electronic components. BSS209PWH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS209PWH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS209PWH6327XTSA1 Atribi pwodwi yo
Nimewo Pati :
BSS209PWH6327XTSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 20V 0.63A SOT-323
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
630mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
550 mOhm @ 630mA, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 3.5µA
Chaje Gate (Qg) (Max) @ Vgs :
1.3nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
115pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SOT323-3
Pake / Ka :
SC-70, SOT-323
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