Infineon Technologies - IRFBA1404P

KEY Part #: K6414636

[8368PC Stock]


    Nimewo Pati:
    IRFBA1404P
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 40V 206A SUPER-220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - JFETs and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRFBA1404P electronic components. IRFBA1404P can be shipped within 24 hours after order. If you have any demands for IRFBA1404P, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFBA1404P Atribi pwodwi yo

    Nimewo Pati : IRFBA1404P
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 40V 206A SUPER-220
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 40V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 206A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 3.7 mOhm @ 95A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 200nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 7360pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 300W (Tc)
    Operating Tanperati : -40°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : SUPER-220™ (TO-273AA)
    Pake / Ka : Super-220™-3 (Straight Leads)