[13342PC Stock]
- Nimewo Pati:
- NP36P06KDG-E1-AY
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET P-CH 60V 36A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Diodes - RF and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America NP36P06KDG-E1-AY electronic components. NP36P06KDG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP36P06KDG-E1-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP36P06KDG-E1-AY Atribi pwodwi yo
Nimewo Pati :
NP36P06KDG-E1-AY
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET P-CH 60V 36A TO-263
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
29.5 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3100pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.8W (Ta), 56W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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