IXFP5N100PM Pricing (USD) [27344PC Stock]
- 1 pcs$1.65703
- 10 pcs$1.47855
- 100 pcs$1.21241
- 500 pcs$0.93141
- 1,000 pcs$0.78553
- Nimewo Pati:
- IXFP5N100PM
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 2.3A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - JFETs, Diodes - Bridge rèktifikateur and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in IXYS IXFP5N100PM electronic components. IXFP5N100PM can be shipped within 24 hours after order. If you have any demands for IXFP5N100PM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP5N100PM Atribi pwodwi yo
Nimewo Pati :
IXFP5N100PM
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 2.3A TO-220
Seri :
HiPerFET™, PolarP2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.8 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
33.4nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1830pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
42W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220 Isolated Tab
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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