[13149PC Stock]
- Nimewo Pati:
- IXTA200N085T7
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 85V 200A TO-263-7.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Diodes - Zener - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA200N085T7 electronic components. IXTA200N085T7 can be shipped within 24 hours after order. If you have any demands for IXTA200N085T7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA200N085T7 Atribi pwodwi yo
Nimewo Pati :
IXTA200N085T7
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 85V 200A TO-263-7
Seri :
TrenchMV™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
85V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
152nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
480W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263-7 (IXTA..7)
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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