Nimewo Pati :
IRFHM3911TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 10A PQFN
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.2A (Ta), 20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
115 mOhm @ 6.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 35µA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
760pF @ 50V
Disipasyon Pouvwa (Max) :
2.8W (Ta), 29W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (3x3)