Infineon Technologies - IRFHM3911TRPBF

KEY Part #: K6420827

IRFHM3911TRPBF Pricing (USD) [265278PC Stock]

  • 1 pcs$0.13943
  • 4,000 pcs$0.11960

Nimewo Pati:
IRFHM3911TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 10A PQFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFHM3911TRPBF electronic components. IRFHM3911TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM3911TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFHM3911TRPBF Atribi pwodwi yo

Nimewo Pati : IRFHM3911TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 10A PQFN
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.2A (Ta), 20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 115 mOhm @ 6.3A, 10V
Vgs (th) (Max) @ Id : 4V @ 35µA
Chaje Gate (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 760pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.8W (Ta), 29W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-PQFN (3x3)
Pake / Ka : 8-PowerTDFN