[13423PC Stock]
- Nimewo Pati:
- IRFD113
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 60V 800MA 4-DIP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFD113 electronic components. IRFD113 can be shipped within 24 hours after order. If you have any demands for IRFD113, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD113 Atribi pwodwi yo
Nimewo Pati :
IRFD113
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 60V 800MA 4-DIP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
800mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
800 mOhm @ 800mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
200pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
4-HVMDIP
Pake / Ka :
4-DIP (0.300", 7.62mm)
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