Nimewo Pati :
SI4590DY-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P CHAN 100V SO8 DUAL
FET Kalite :
N and P-Channel
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.4A, 2.8A
RD sou (Max) @ Id, Vgs :
57 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
360pF @ 50V
Pouvwa - Max :
2.4W, 3.4W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO