SIZ920DT-T1-GE3 Pricing (USD) [4014PC Stock]
- 3,000 pcs$0.33301
- Nimewo Pati:
- SIZ920DT-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 40A PWRPAIR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Diodes - RF, Tiristors - TRIACs, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIZ920DT-T1-GE3 electronic components. SIZ920DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ920DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ920DT-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIZ920DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 30V 40A PWRPAIR
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
40A
RD sou (Max) @ Id, Vgs :
7.1 mOhm @ 18.9A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1260pF @ 15V
Pouvwa - Max :
39W, 100W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerWDFN
Pake Aparèy Founisè :
8-PowerPair® (6x5)
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