Manifakti :
IXYS Integrated Circuits Division
Deskripsyon :
MOSFET N-CH 350V 0.005A SOT-89
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
350V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-0.35V
RD sou (Max) @ Id, Vgs :
14 Ohm @ 50mA, 350mV
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
1.1W (Ta)
Operating Tanperati :
-40°C ~ 110°C (TA)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-89