IXYS - IXFH50N30Q3

KEY Part #: K6398592

IXFH50N30Q3 Pricing (USD) [9052PC Stock]

  • 1 pcs$5.23111
  • 10 pcs$4.70932
  • 100 pcs$3.87225
  • 500 pcs$3.24431

Nimewo Pati:
IXFH50N30Q3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 300V 50A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in IXYS IXFH50N30Q3 electronic components. IXFH50N30Q3 can be shipped within 24 hours after order. If you have any demands for IXFH50N30Q3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH50N30Q3 Atribi pwodwi yo

Nimewo Pati : IXFH50N30Q3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 300V 50A TO-247
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 80 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 6.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 65nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3160pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 690W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3

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