Nimewo Pati :
NTLJS1102PTAG
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 8V 3.7A 6-WDFN
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.2V, 4.5V
RD sou (Max) @ Id, Vgs :
36 mOhm @ 6.2A, 4.5V
Vgs (th) (Max) @ Id :
720mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1585pF @ 4V
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-WDFN (2x2)
Pake / Ka :
6-WDFN Exposed Pad