PMXB65UPEZ Pricing (USD) [1048445PC Stock]
- 1 pcs$0.04270
- 5,000 pcs$0.04248
- Nimewo Pati:
- PMXB65UPEZ
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET P-CH 12V 3.2A DFN1010D-3G.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - JFETs and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMXB65UPEZ electronic components. PMXB65UPEZ can be shipped within 24 hours after order. If you have any demands for PMXB65UPEZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMXB65UPEZ Atribi pwodwi yo
Nimewo Pati :
PMXB65UPEZ
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET P-CH 12V 3.2A DFN1010D-3G
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.2V, 4.5V
RD sou (Max) @ Id, Vgs :
72 mOhm @ 3.2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
634pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
317mW (Ta), 8.33W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1010D-3
Pake / Ka :
3-XDFN Exposed Pad
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