Nimewo Pati :
SI1035X-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 20V SC-89
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180mA, 145mA
RD sou (Max) @ Id, Vgs :
5 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
400mV @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
0.75nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
SC-89-6