Vishay Siliconix - SI1035X-T1-GE3

KEY Part #: K6524848

SI1035X-T1-GE3 Pricing (USD) [518123PC Stock]

  • 1 pcs$0.07139
  • 3,000 pcs$0.06743

Nimewo Pati:
SI1035X-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N/P-CH 20V SC-89.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI1035X-T1-GE3 electronic components. SI1035X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1035X-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1035X-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI1035X-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N/P-CH 20V SC-89
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180mA, 145mA
RD sou (Max) @ Id, Vgs : 5 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id : 400mV @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs : 0.75nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 250mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : SC-89-6