Vishay Siliconix - SI4940DY-T1-E3

KEY Part #: K6524023

[3970PC Stock]


    Nimewo Pati:
    SI4940DY-T1-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET 2N-CH 40V 4.2A 8-SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI4940DY-T1-E3 electronic components. SI4940DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4940DY-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4940DY-T1-E3 Atribi pwodwi yo

    Nimewo Pati : SI4940DY-T1-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET 2N-CH 40V 4.2A 8-SOIC
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 40V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.2A
    RD sou (Max) @ Id, Vgs : 36 mOhm @ 5.7A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA (Min)
    Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Pouvwa - Max : 1.1W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
    Pake Aparèy Founisè : 8-SO