Deskripsyon :
MOSFET 4N-CH 100V 10A 12SIP
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A
RD sou (Max) @ Id, Vgs :
80 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2V @ 250mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
1630pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
12-SIP w/fin