[2124PC Stock]
- Nimewo Pati:
- HS54095TZ-E
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 600V 0.2A TO-92.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America HS54095TZ-E electronic components. HS54095TZ-E can be shipped within 24 hours after order. If you have any demands for HS54095TZ-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HS54095TZ-E Atribi pwodwi yo
Nimewo Pati :
HS54095TZ-E
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 600V 0.2A TO-92
Seri :
-
Estati Pati :
Last Time Buy
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
16.5 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
4.8nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
66pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
750mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-92-3
Pake / Ka :
TO-226-3, TO-92-3 Short Body
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