Diodes Incorporated - ZXMC3F31DN8TA

KEY Part #: K6522814

ZXMC3F31DN8TA Pricing (USD) [216484PC Stock]

  • 1 pcs$0.17086
  • 500 pcs$0.15662

Nimewo Pati:
ZXMC3F31DN8TA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N/P-CH 30V 6.8A/4.9A 8SO.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Tiristors - SCR, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMC3F31DN8TA Atribi pwodwi yo

Nimewo Pati : ZXMC3F31DN8TA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Seri : -
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate, 4.5V Drive
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.8A, 4.9A
RD sou (Max) @ Id, Vgs : 24 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 12.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 608pF @ 15V
Pouvwa - Max : 1.8W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO