IXTJ4N150 Pricing (USD) [12567PC Stock]
- 1 pcs$3.62546
- 60 pcs$3.60742
- Nimewo Pati:
- IXTJ4N150
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1500V 2.5A ISOTO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTJ4N150 electronic components. IXTJ4N150 can be shipped within 24 hours after order. If you have any demands for IXTJ4N150, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTJ4N150 Atribi pwodwi yo
Nimewo Pati :
IXTJ4N150
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1500V 2.5A ISOTO-247
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
44.5nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1576pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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