Deskripsyon :
GAN TRANS 2N-CH 100V BUMPED DIE
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A
RD sou (Max) @ Id, Vgs :
6.3 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 5.5mA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
800pF @ 50V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die