IXFB150N65X2 Pricing (USD) [3961PC Stock]
- 1 pcs$12.02727
- 10 pcs$11.12522
- 100 pcs$9.50154
- Nimewo Pati:
- IXFB150N65X2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 650V 150A PLUS264.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tiristors - TRIACs, Transistors - IGBTs - Single and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXFB150N65X2 electronic components. IXFB150N65X2 can be shipped within 24 hours after order. If you have any demands for IXFB150N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFB150N65X2 Atribi pwodwi yo
Nimewo Pati :
IXFB150N65X2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 650V 150A PLUS264
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
150A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
17 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
430nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
20400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1560W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS264™
Pake / Ka :
TO-264-3, TO-264AA
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