IXFH26N60P Pricing (USD) [14843PC Stock]
- 1 pcs$3.19507
- 10 pcs$2.87380
- 100 pcs$2.36272
- 500 pcs$1.97958
- 1,000 pcs$1.72415
- Nimewo Pati:
- IXFH26N60P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 26A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH26N60P electronic components. IXFH26N60P can be shipped within 24 hours after order. If you have any demands for IXFH26N60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH26N60P Atribi pwodwi yo
Nimewo Pati :
IXFH26N60P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 26A TO-247
Seri :
PolarHV™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
26A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
270 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
4150pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
460W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AD (IXFH)
Pake / Ka :
TO-247-3
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