[4054PC Stock]
- Nimewo Pati:
- PMDPB56XN,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 3.1A HUSON6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMDPB56XN,115 electronic components. PMDPB56XN,115 can be shipped within 24 hours after order. If you have any demands for PMDPB56XN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB56XN,115 Atribi pwodwi yo
Nimewo Pati :
PMDPB56XN,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET 2N-CH 30V 3.1A HUSON6
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.1A
RD sou (Max) @ Id, Vgs :
73 mOhm @ 3.1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.9nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
170pF @ 15V
Pouvwa - Max :
510mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-UDFN Exposed Pad
Pake Aparèy Founisè :
DFN2020-6
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