STMicroelectronics - STB16NK65Z-S

KEY Part #: K6415859

[12264PC Stock]


    Nimewo Pati:
    STB16NK65Z-S
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    MOSFET N-CH 650V 13A I2SPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Tiristors - TRIACs and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STB16NK65Z-S electronic components. STB16NK65Z-S can be shipped within 24 hours after order. If you have any demands for STB16NK65Z-S, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STB16NK65Z-S Atribi pwodwi yo

    Nimewo Pati : STB16NK65Z-S
    Manifakti : STMicroelectronics
    Deskripsyon : MOSFET N-CH 650V 13A I2SPAK
    Seri : SuperMESH™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 650V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 500 mOhm @ 6.5A, 10V
    Vgs (th) (Max) @ Id : 4.5V @ 100µA
    Chaje Gate (Qg) (Max) @ Vgs : 89nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 2750pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 190W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : I2PAK
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA