[12264PC Stock]
- Nimewo Pati:
- STB16NK65Z-S
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 650V 13A I2SPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Diodes - RF, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STB16NK65Z-S electronic components. STB16NK65Z-S can be shipped within 24 hours after order. If you have any demands for STB16NK65Z-S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB16NK65Z-S Atribi pwodwi yo
Nimewo Pati :
STB16NK65Z-S
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 650V 13A I2SPAK
Seri :
SuperMESH™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
13A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
500 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
89nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2750pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
190W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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