Nimewo Pati :
IPZ65R065C7XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 650V TO247-4
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
33A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
65 mOhm @ 17.1A, 10V
Vgs (th) (Max) @ Id :
4V @ 850µA
Chaje Gate (Qg) (Max) @ Vgs :
64nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
3020pF @ 400V
Disipasyon Pouvwa (Max) :
171W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO247-4