IXTU12N06T Pricing (USD) [83500PC Stock]
- 1 pcs$0.67314
- 10 pcs$0.59621
- 100 pcs$0.47120
- 500 pcs$0.34567
- 1,000 pcs$0.27289
- Nimewo Pati:
- IXTU12N06T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 60V 12A TO-251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in IXYS IXTU12N06T electronic components. IXTU12N06T can be shipped within 24 hours after order. If you have any demands for IXTU12N06T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTU12N06T Atribi pwodwi yo
Nimewo Pati :
IXTU12N06T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 60V 12A TO-251
Seri :
TrenchMV™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
85 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
3.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
256pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
33W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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