Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2N-CH 60V 2A MPT6
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 4V Drive
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A
RD sou (Max) @ Id, Vgs :
290 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
2nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
110pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-SMD, Flat Leads
Pake Aparèy Founisè :
MPT6