Infineon Technologies - IPA50R800CEXKSA2

KEY Part #: K6420448

IPA50R800CEXKSA2 Pricing (USD) [195356PC Stock]

  • 1 pcs$0.18933
  • 500 pcs$0.17358

Nimewo Pati:
IPA50R800CEXKSA2
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 500V 4.1A TO-220FP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Tiristors - SCR and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA50R800CEXKSA2 Atribi pwodwi yo

Nimewo Pati : IPA50R800CEXKSA2
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 500V 4.1A TO-220FP
Seri : CoolMOS™ CE
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 13V
RD sou (Max) @ Id, Vgs : 800 mOhm @ 1.5A, 13V
Vgs (th) (Max) @ Id : 3.5V @ 130µA
Chaje Gate (Qg) (Max) @ Vgs : 12.4nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 280pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 26.4W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220 Full Pack
Pake / Ka : TO-220-3 Full Pack

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