Toshiba Semiconductor and Storage - TK6A60D(STA4,Q,M)

KEY Part #: K6402361

TK6A60D(STA4,Q,M) Pricing (USD) [56337PC Stock]

  • 1 pcs$0.76512
  • 10 pcs$0.67732
  • 100 pcs$0.53521
  • 500 pcs$0.41507
  • 1,000 pcs$0.30997

Nimewo Pati:
TK6A60D(STA4,Q,M)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 600V 6A TO220SIS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK6A60D(STA4,Q,M) electronic components. TK6A60D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK6A60D(STA4,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK6A60D(STA4,Q,M) Atribi pwodwi yo

Nimewo Pati : TK6A60D(STA4,Q,M)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 600V 6A TO220SIS
Seri : π-MOSVII
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.25 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 40W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220SIS
Pake / Ka : TO-220-3 Full Pack