Nimewo Pati :
SSM6N55NU,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2N-CH 30V 4A UDFN6
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A
RD sou (Max) @ Id, Vgs :
46 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
2.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
280pF @ 15V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-WDFN Exposed Pad
Pake Aparèy Founisè :
6-µDFN(2x2)