HTNFET-T Pricing (USD) [214PC Stock]
- 1 pcs$228.88602
- 10 pcs$220.40876
- Nimewo Pati:
- HTNFET-T
- Manifakti:
- Honeywell Aerospace
- Detaye deskripsyon:
- MOSFET N-CH 55V 4-PIN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Honeywell Aerospace HTNFET-T electronic components. HTNFET-T can be shipped within 24 hours after order. If you have any demands for HTNFET-T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HTNFET-T Atribi pwodwi yo
Nimewo Pati :
HTNFET-T
Manifakti :
Honeywell Aerospace
Deskripsyon :
MOSFET N-CH 55V 4-PIN
Seri :
HTMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
400 mOhm @ 100mA, 5V
Vgs (th) (Max) @ Id :
2.4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
4.3nC @ 5V
Vgs (Max) :
10V
Antre kapasite (Ciss) (Max) @ Vds :
290pF @ 28V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
50W (Tj)
Operating Tanperati :
-55°C ~ 225°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
4-Power Tab
Pake / Ka :
4-SIP
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